Modified Transmission Line Model for Bottom-Contact Organic Transistors

Author

Wei Wang ; Ling Li ; Zhuoyu Ji ; Tianchun Ye ; Nianduan Lu ; Zhigang Li ; Dongmei Li ; Ming Liu

Author_Institution

Lab. of Nanofabrication & Novel Devices Integration Technol., Inst. of Microelectron., Beijing, China

Volume

34

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

1301

Lastpage

1303

Abstract

In this letter, an improved transmission line model is proposed to investigate contact resistance (CR) in bottom-gate bottom-contact organic thin-film transistors (OTFTs). With the modified model, the CR decreases with the increase of gate voltage, which is a good agreement to experimental results. Further, the CR dependence to thickness, width, and edge angle of drain/source electrode contact has been discussed in detail. The simulation result provides a possible way to improve the performance of bottom-contact OTFTs.

Keywords

contact resistance; electrodes; thin film transistors; CR; OTFT; bottom-gate bottom-contact organic thin-film transistor; contact resistance; drain-source electrode contact; modified transmission line model; Electrodes; Logic gates; Organic semiconductors; Organic thin film transistors; Resistance; Bottom contact; contact resistance (CR); organic transistors; transmission line model;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2278012

Filename

6594860