Title :
Modified Transmission Line Model for Bottom-Contact Organic Transistors
Author :
Wei Wang ; Ling Li ; Zhuoyu Ji ; Tianchun Ye ; Nianduan Lu ; Zhigang Li ; Dongmei Li ; Ming Liu
Author_Institution :
Lab. of Nanofabrication & Novel Devices Integration Technol., Inst. of Microelectron., Beijing, China
Abstract :
In this letter, an improved transmission line model is proposed to investigate contact resistance (CR) in bottom-gate bottom-contact organic thin-film transistors (OTFTs). With the modified model, the CR decreases with the increase of gate voltage, which is a good agreement to experimental results. Further, the CR dependence to thickness, width, and edge angle of drain/source electrode contact has been discussed in detail. The simulation result provides a possible way to improve the performance of bottom-contact OTFTs.
Keywords :
contact resistance; electrodes; thin film transistors; CR; OTFT; bottom-gate bottom-contact organic thin-film transistor; contact resistance; drain-source electrode contact; modified transmission line model; Electrodes; Logic gates; Organic semiconductors; Organic thin film transistors; Resistance; Bottom contact; contact resistance (CR); organic transistors; transmission line model;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2278012
