Investigation of temperature effects on electron transport in SiC using unique full band Monte Carlo simulation

Author

Pennington, Gary ; Goldsman, Neil ; Scozzie, Skip ; McGarrity, James M. ; McLean, Barry

Author_Institution

Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA

fYear

2001

fDate

2001

Firstpage

531

Lastpage

534

Abstract

We present a detailed full band Monte Carlo (MC) study of electron transport in 6H-SiC ⊥ to the c-axis with emphasis on the effect of temperature and the band structure at high fields. The empirical pseudopotential for 6H-SiC is used for the first time in the MC transport simulations. We find that as many as five conduction bands and the Γ valley make significant contributions to electron transport at high temperature and fields. Electron-phonon coupling constants are obtained for 6H-SiC by fitting to experimental temperature-dependent drift velocity for the first time

Keywords

Monte Carlo methods; band structure; carrier mobility; electron-phonon interactions; pseudopotential methods; silicon compounds; wide band gap semiconductors; Γ valley; SiC; band structure; conduction band; drift velocity; electron transport; electron-phonon coupling constant; empirical pseudopotential; full-band Monte Carlo simulation; temperature dependence; Acoustic scattering; Anisotropic magnetoresistance; Effective mass; Electrons; Monte Carlo methods; Optical scattering; Phonons; Silicon carbide; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984566

Filename

984566