Low temperature bonding using sub-micron Au particles for wafer-level MEMS packaging

Author

Ito, Satoshi ; Mizuno, Jun ; Ishida, Hiroto ; Ogashiwa, Toshinori ; Kanehira, Yukio ; Murai, Hitoshi ; Wakai, F. ; Shoji, Shuji

Author_Institution

Waseda Univ., Tokyo, Japan

fYear

2012

fDate

10-12 Dec. 2012

Firstpage

1

Lastpage

4

Abstract

In this study, low temperature bonding using sub-micron Au particles was investigated. Two types of Au particles with different average mean diameter of 0.1 μm and 0.3 μm were used. The 0.1 μm Au particles were sintered at lower temperature than that of 0.3 μm. These particles have an advantage of low sintering temperature under 200 °C, and compensating surface roughness. The compression deformation properties of Au particles were measured. They were compressed to around 3 and 5 μm at 30 and 100 MPa applied pressure, respectively. Chip-level bonding was performed with sealing rings of Au particles. The tensile strength of 55.2 MPa was obtained by bonding under applied pressure of 50 MPa at 100 °C. As the evaluation of hermeticity, gross leak test was performed for bonded chips with single, double, and triple sealing rings.

Keywords

bonding processes; gold; micromechanical devices; seals (stoppers); wafer level packaging; Au; bonded chips; compression deformation properties; double sealing rings; gross leak test; low temperature bonding; pressure 30 MPa to 100 MPa; single sealing rings; sintering temperature; submicron particles; temperature 100 degC; triple sealing rings; wafer-level MEMS packaging;

fLanguage

English

Publisher

ieee

Conference_Titel

CPMT Symposium Japan, 2012 2nd IEEE

Conference_Location

Kyoto

Print_ISBN

978-1-4673-2654-4

Type

conf

DOI

10.1109/ICSJ.2012.6523451

Filename

6523451