Title :
Heterogeneous 3D Stacking technology developments in ASET
Author_Institution :
Assoc. of Super-Adv. Electron. Technol. (ASET), Tokyo, Japan
Abstract :
For TSV/3D-Stacking technology developments, Memory Cubes (such as 4-high stack DDR3 SDRAM, Wide-IO DRAM and HMC) have been leading the progress of the technologies [1], [2].
Keywords :
DRAM chips; three-dimensional integrated circuits; ASET; DDR3 SDRAM; TSV; heterogeneous 3D stacking technology development; memory cubes; wide IO DRAM;
Conference_Titel :
CPMT Symposium Japan, 2012 2nd IEEE
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-2654-4
DOI :
10.1109/ICSJ.2012.6523453
