Title :
Silicon nanoelectronics: prospects and promises
Author :
McGill, T.C. ; Daniel, Erik S. ; Jones, J.T. ; Marsh, O.J.
Author_Institution :
Thomas J. Watson Lab. of Appl. Phys., California Inst. of Technol., Pasadena, CA
Abstract :
It is widely recognized that the holy grail for nanoelectronics is a technology that is compatible with standard silicon. We review the current prospects for the development of such a technology. We will discuss the current prospects for Si based heterojunctions including SiGeC, CaF2, CeO2, SiO2 and ZnS to name just a few. Further, we review the status of one device structures, the tunnel switched diode, which can currently be deployed in a number of applications
Keywords :
elemental semiconductors; nanotechnology; semiconductor heterojunctions; semiconductor technology; silicon; tunnel diodes; Si; heterojunction; silicon nanoelectronics; technology; tunnel switched diode; Germanium silicon alloys; Heterojunctions; Kirk field collapse effect; Laboratories; Lattices; Nanoelectronics; Semiconductor diodes; Silicon germanium; Strontium; Zinc compounds;
Conference_Titel :
Frontiers in Electronics, 1997. WOFE '97. Proceedings., 1997 Advanced Workshop on
Conference_Location :
Puerto de la Cruz
Print_ISBN :
0-7803-4059-0
DOI :
10.1109/WOFE.1997.621172
