• DocumentCode
    2259060
  • Title

    Silicon nanoelectronics: prospects and promises

  • Author

    McGill, T.C. ; Daniel, Erik S. ; Jones, J.T. ; Marsh, O.J.

  • Author_Institution
    Thomas J. Watson Lab. of Appl. Phys., California Inst. of Technol., Pasadena, CA
  • fYear
    1997
  • fDate
    6-11 Jan 1997
  • Firstpage
    119
  • Lastpage
    121
  • Abstract
    It is widely recognized that the holy grail for nanoelectronics is a technology that is compatible with standard silicon. We review the current prospects for the development of such a technology. We will discuss the current prospects for Si based heterojunctions including SiGeC, CaF2, CeO2, SiO2 and ZnS to name just a few. Further, we review the status of one device structures, the tunnel switched diode, which can currently be deployed in a number of applications
  • Keywords
    elemental semiconductors; nanotechnology; semiconductor heterojunctions; semiconductor technology; silicon; tunnel diodes; Si; heterojunction; silicon nanoelectronics; technology; tunnel switched diode; Germanium silicon alloys; Heterojunctions; Kirk field collapse effect; Laboratories; Lattices; Nanoelectronics; Semiconductor diodes; Silicon germanium; Strontium; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Frontiers in Electronics, 1997. WOFE '97. Proceedings., 1997 Advanced Workshop on
  • Conference_Location
    Puerto de la Cruz
  • Print_ISBN
    0-7803-4059-0
  • Type

    conf

  • DOI
    10.1109/WOFE.1997.621172
  • Filename
    621172
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2259060