• DocumentCode
    2259067
  • Title

    Corner effect in multiple-gate SOI MOSFETs

  • Author

    Xiong, W. ; Park, J.W. ; Colinge, J.P.

  • Author_Institution
    SEMATECH, Austin, TX, USA
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    111
  • Lastpage
    113
  • Abstract
    Separate formation of channels in corners and sides of triple-gate SOI MOSFETs is observed. This phenomenon degrades the Ion/Ioff ratio and the subthreshold slope, but it is present only if high doping concentrations and corners with a small radius of curvature are used.
  • Keywords
    MOSFET; elemental semiconductors; semiconductor device models; semiconductor doping; semiconductor process modelling; silicon-on-insulator; Si; corner effect; doping concentrations; multiple-gate SOI MOSFET; MOSFETs; Semiconductor device doping; Semiconductor device modeling; Semiconductor process modeling; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242919
  • Filename
    1242919
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2259067