DocumentCode :
2259067
Title :
Corner effect in multiple-gate SOI MOSFETs
Author :
Xiong, W. ; Park, J.W. ; Colinge, J.P.
Author_Institution :
SEMATECH, Austin, TX, USA
fYear :
2003
fDate :
29 Sept.-2 Oct. 2003
Firstpage :
111
Lastpage :
113
Abstract :
Separate formation of channels in corners and sides of triple-gate SOI MOSFETs is observed. This phenomenon degrades the Ion/Ioff ratio and the subthreshold slope, but it is present only if high doping concentrations and corners with a small radius of curvature are used.
Keywords :
MOSFET; elemental semiconductors; semiconductor device models; semiconductor doping; semiconductor process modelling; silicon-on-insulator; Si; corner effect; doping concentrations; multiple-gate SOI MOSFET; MOSFETs; Semiconductor device doping; Semiconductor device modeling; Semiconductor process modeling; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2003. IEEE International
ISSN :
1078-621X
Print_ISBN :
0-7803-7815-6
Type :
conf
DOI :
10.1109/SOI.2003.1242919
Filename :
1242919
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2259067
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