Title :
The pH response of a silicon-on-insulator MOSFET with an integrated nanofluidic cell
Author :
Takulapalli, B.R. ; Thornton, Trevor J. ; Gust, D. ; Ashcroft, B. ; Lindsay, S.M. ; Zhang, H.Q. ; Tao, NJ
Author_Institution :
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, we study the pH response of a buried channel SOI MOSFET integrated with a nanofluidic cell. The surface of the device is exposed to solutions of different pH to validate the sensitivity of the device to different chemical and biological environments.
Keywords :
MOSFET; cells (electric); elemental semiconductors; microfluidics; nanotechnology; pH; sensitivity; silicon-on-insulator; surface treatment; SOI MOSFET; Si; biological environments; chemical environments; device surface; integrated nanofluidic cell; pH response; sensitivity; silicon-on-insulator MOSFET; Batteries; MOSFETs; Nanotechnology; Sensitivity; Silicon on insulator technology; Surface treatment;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242920
