Title :
Electron and hole contribution to thermal noise in short-channel MOSFETs
Author :
Obrecht, Michael S. ; Hornsey, Richard ; Manku, Tajinder
Author_Institution :
Siborg Syst. Inc., Waterloo, Ont., Canada
Abstract :
We used a 2D Green´s function method similar to the Impedance Field Method for an accurate high frequency noise analysis. The method has been proven to reasonably well predict the noise performance of semiconductor devices, including MOSFETs. In the present paper we applied the method to a 0.2μm gate NMOSFET
Keywords :
Green´s function methods; MOSFET; semiconductor device models; semiconductor device noise; thermal noise; 0.2 micron; 2D Greens function method; NMOSFET; electron contribution; high frequency noise analysis; hole contribution; noise performance; semiconductor devices; short-channel MOSFETs; thermal noise; Active noise reduction; Charge carrier processes; Electrons; Frequency domain analysis; Green function; Impedance; MOSFET circuits; Semiconductor device noise; Semiconductor devices; Transient analysis;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984572
