DocumentCode
2259154
Title
Short channel and back-gate coupling effects in silicon-on-nothing (SON) MOSFETs
Author
Pretet, J. ; Cristoloveanu, S. ; Skotnicki, T. ; Monfray, S.
Author_Institution
STMicroelectron., Crolles, France
fYear
2003
fDate
29 Sept.-2 Oct. 2003
Firstpage
122
Lastpage
123
Abstract
In this paper, we investigate short channel effects (SCE) and coupling behaviour. A detailed analysis of the front and back-gate coupling and an original model of the interface coupling are presented.
Keywords
MOSFET; elemental semiconductors; semiconductor device models; semiconductor thin films; silicon; Si; back-gate coupling effects; front-gate coupling; interface coupling; short channel effects; silicon-on-nothing MOSFET; MOSFETs; Semiconductor device modeling; Semiconductor films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2003. IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-7815-6
Type
conf
DOI
10.1109/SOI.2003.1242923
Filename
1242923
Link To Document