Title :
Short channel and back-gate coupling effects in silicon-on-nothing (SON) MOSFETs
Author :
Pretet, J. ; Cristoloveanu, S. ; Skotnicki, T. ; Monfray, S.
Author_Institution :
STMicroelectron., Crolles, France
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, we investigate short channel effects (SCE) and coupling behaviour. A detailed analysis of the front and back-gate coupling and an original model of the interface coupling are presented.
Keywords :
MOSFET; elemental semiconductors; semiconductor device models; semiconductor thin films; silicon; Si; back-gate coupling effects; front-gate coupling; interface coupling; short channel effects; silicon-on-nothing MOSFET; MOSFETs; Semiconductor device modeling; Semiconductor films; Silicon;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242923
