Transient response characteristics of through silicon via in high resistivity silicon interposer

Author

Watanabe, N. ; Ueda, Chihiro ; Fujii, Fumiaki ; Akiyama, Yoko ; Kikuchi, Kazuro ; Kitamura, Yoshifumi ; Gomyo, Toshio ; Ookubo, Tetsu ; Koyama, Tomofumi ; Kamada, Tomonari ; Aoyagi, Masahiro ; Otsuka, Kanji

Author_Institution

Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2012

fDate

10-12 Dec. 2012

Firstpage

1

Lastpage

4

Abstract

We investigated the transient response characteristic of through silicon via (TSV) in a high-resistivity silicon interposer. For this investigation, signal ground (SG)-TSV-chain pairs in high-resisitivity silicon (>1000 Ω·cm) were prepared. Various pulse waves (swing: -1.8-0 V or 0-+1.8 V, pulse width: 250 ps-100 ms, duty ratio: 1/1) were applied to a SG-TSV-chain pair by using a pulse generator, and output signal was obtained using a sampling oscilloscope. From the rise and fall time of output signal, it was found that the change in transient response characteristic according to the frequency and voltage of the applied pulse wave was very small. This result demonstrates that the change in TSV capacitance with the input signal is very small and that high-resistivity silicon is effective for high speed signal processing.

Keywords

integrated circuit interconnections; oscilloscopes; pulse generators; silicon; three-dimensional integrated circuits; transient response; TSV capacitance; high resistivity silicon interposer; pulse generator; sampling oscilloscope; signal ground-TSV-chain pairs; through silicon via; transient response;

fLanguage

English

Publisher

ieee

Conference_Titel

CPMT Symposium Japan, 2012 2nd IEEE

Conference_Location

Kyoto

Print_ISBN

978-1-4673-2654-4

Type

conf

DOI

10.1109/ICSJ.2012.6523459

Filename

6523459