DocumentCode :
2259177
Title :
SOI wafer polishing with magnetorheological finishing (MRF)
Author :
Tricard, Marc ; Dumas, Paul R. ; Golini, Don ; Mooney, James T.
Author_Institution :
QED Technol., Rochester, NY, USA
fYear :
2003
fDate :
29 Sept.-2 Oct. 2003
Firstpage :
127
Lastpage :
129
Abstract :
In this paper, SOI wafer polishing with magnetorheological finishing (MRF) process were discussed. A precision polishing method called magnetorheological finishing used to improve nominal thickness and associated thickness uniformity of the silicon layer.
Keywords :
electrolytic polishing; elemental semiconductors; magnetorheology; silicon-on-insulator; SOI wafer polishing; Si-SiO2; magnetorheological finishing; precision polishing; silicon layer; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2003. IEEE International
ISSN :
1078-621X
Print_ISBN :
0-7803-7815-6
Type :
conf
DOI :
10.1109/SOI.2003.1242924
Filename :
1242924
Link To Document :
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