DocumentCode :
2259196
Title :
Towards a chip level reliability simulator for copper/low-k backend processes
Author :
Bashir, Muhammad ; Milor, Linda
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2010
fDate :
8-12 March 2010
Firstpage :
279
Lastpage :
282
Abstract :
A framework is proposed to analyze circuit layout geometries to predict chip lifetime due to low-k time-dependent dielectric breakdown (TDDB). The methodology uses as inputs data from test structures, which have been designed and fabricated to detect the impact of area and metal linewidth on low-k TDDB.
Keywords :
copper; electric breakdown; integrated circuit layout; integrated circuit manufacture; integrated circuit reliability; Cu; chip level reliability simulator; chip lifetime; circuit layout geometries; copper/low-k backend processes; low-k time-dependent dielectric breakdown; Analytical models; Computational modeling; Copper; Dielectric breakdown; Dielectric materials; Electric breakdown; Integrated circuit interconnections; Power system interconnection; Predictive models; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2010
Conference_Location :
Dresden
ISSN :
1530-1591
Print_ISBN :
978-1-4244-7054-9
Type :
conf
DOI :
10.1109/DATE.2010.5457195
Filename :
5457195
Link To Document :
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