Title :
Formation of strained Si/SiGe on insulator structure with a [110] surface
Author :
Sugiyama, N. ; Mizuno, T. ; Moriyama, Y. ; Nakaharai, S. ; Tezuka, T. ; Takagi, S.
Author_Institution :
MIRAI Project, Assoc. of Super-Adv. Electron. Technol., Kawasaki, Japan
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, two SGOI fabrication techniques; SIMOX technique and Ge condensation method by oxidation were employed and the successful fabrication of [110] oriented SGOI and strained SOI substrates was demonstrated.
Keywords :
Ge-Si alloys; SIMOX; elemental semiconductors; film condensation; oxidation; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; silicon-on-insulator; vapour phase epitaxial growth; Ge condensation; SIMOX; SOI substrates; Si-SiGe; strained Si/SiGe on insulator structure; Epitaxial growth; Germanium alloys; Oxidation; SIMOX; Semiconductor device doping; Semiconductor epitaxial layers; Semiconductor growth; Silicon; Silicon alloys; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242925
