DocumentCode
2259197
Title
Formation of strained Si/SiGe on insulator structure with a [110] surface
Author
Sugiyama, N. ; Mizuno, T. ; Moriyama, Y. ; Nakaharai, S. ; Tezuka, T. ; Takagi, S.
Author_Institution
MIRAI Project, Assoc. of Super-Adv. Electron. Technol., Kawasaki, Japan
fYear
2003
fDate
29 Sept.-2 Oct. 2003
Firstpage
130
Lastpage
131
Abstract
In this paper, two SGOI fabrication techniques; SIMOX technique and Ge condensation method by oxidation were employed and the successful fabrication of [110] oriented SGOI and strained SOI substrates was demonstrated.
Keywords
Ge-Si alloys; SIMOX; elemental semiconductors; film condensation; oxidation; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; silicon; silicon-on-insulator; vapour phase epitaxial growth; Ge condensation; SIMOX; SOI substrates; Si-SiGe; strained Si/SiGe on insulator structure; Epitaxial growth; Germanium alloys; Oxidation; SIMOX; Semiconductor device doping; Semiconductor epitaxial layers; Semiconductor growth; Silicon; Silicon alloys; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2003. IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-7815-6
Type
conf
DOI
10.1109/SOI.2003.1242925
Filename
1242925
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