DocumentCode :
2259213
Title :
Systematic study of the splitting kinetic of H/He co-implanted substrate
Author :
Nguyen, Phuong ; Cayrefourcq, I. ; Blondeau, B. ; Sousbie, N. ; Lagahe-Blanchard, Chrystelle ; Sartori, S. ; Cartier, AM
Author_Institution :
SOITEC SA, Crolles, France
fYear :
2003
fDate :
29 Sept.-2 Oct. 2003
Firstpage :
132
Lastpage :
134
Abstract :
In this paper, we proposed the results of a systematic study of coimplantation of hydrogen and helium. Systematic SIMS and TEM analysis have been done.
Keywords :
elemental semiconductors; helium; hydrogen; ion implantation; secondary ion mass spectra; silicon; transmission electron microscopy; H; H-He co-implanted substrate; He; SIMS; TEM; coimplantation; helium; hydrogen; splitting kinetics; Electron microscopy; Helium; Hydrogen; Ion implantation; Mass spectroscopy; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2003. IEEE International
ISSN :
1078-621X
Print_ISBN :
0-7803-7815-6
Type :
conf
DOI :
10.1109/SOI.2003.1242926
Filename :
1242926
Link To Document :
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