Requirements for ultra-thin-film devices and new materials on CMOS roadmap

For the first time various devices architectures (Bulk, SOI and SON) and process modules (metal gate, strained-Si channel) are compared a consistent way using the same analytical tool. This analysis shows on one hand that the conventional Bulk cannot match the requirements throughout the entire ITRS´01 roadmap, but on the other hand it gives clear guidelines on device architectures permitting to do so. In other words, this paper puts forward a device architecture roadmap and shows precisely which architectures, modules and materials will be needed at a given CMOS node. This message analysis may be of importance for semiconductor manufacturer, equipment makers and SOI wafer providers.