Title :
Design and fabrication of a novel power VJFET in 4H-SiC
Author :
Zhao, J.H. ; Li, X. ; Tone, K. ; Alexandro, P. ; Pan, Meng-Shiuan ; Weine, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
Abstract :
Detailed processing technologies and the device structure for a planar normally-off VJFET blocking 2,510V is presented along with suggestions for scaling up the total current of this power VJFET
Keywords :
field effect transistor switches; power field effect transistors; semiconductor technology; silicon compounds; 2510 V; 4H-SiC; SiC; SiC substrates; VJFET; unipolar power switch; vertical JFET; Artificial intelligence; Current density; Diodes; Electronics industry; Fabrication; Power electronics; Silicon carbide; Temperature; Thyristors; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984580
