• DocumentCode
    2259305
  • Title

    A detailed analysis of SOI MOSFETs for SOC design

  • Author

    Suryagandh, Sushant S. ; Garg, Mayank ; Woo, Jason C S

  • Author_Institution
    Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    147
  • Lastpage
    148
  • Abstract
    In this paper, we present a physics based Rout model for the bulk and SOI MOSFETs operating at high frequencies, where the AC kink effect is supressed. The model is verified with Silvaco 2-D simulator. Analog performance in terms of intrinsic gain and ft of the bulk and SOI MOSFETs is compared using these models.
  • Keywords
    MOSFET; integrated circuit design; semiconductor device models; silicon-on-insulator; system-on-chip; Rout model; SOC design; SOI MOSFET; Silvaco 2-D simulator; ac kink effect; analog performance; Integrated circuit design; MOSFETs; Semiconductor device modeling; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242931
  • Filename
    1242931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2259305