Characterization and modeling of silicon-carbide power devices

New power semiconductor devices have began to emerge that utilize the advantages of silicon carbide (SiC). As SiC power device types are introduced, circuit performance and reliability characterization is required for system designers to adopt the new technology. Furthermore, the development of circuit simulator models is required to enable the devices to be fully utilized in the circuit and system design process. The purpose of this paper is to demonstrate device metrology and modeling methodologies required to facilitate market penetration of SiC power devices