Title :
Low frequency noise (LFN) characteristics of SiGe channel SOI dynamic threshold MOSFETs (SiGe-SOI-DTMOS) for low-power applications
Author :
Inoue, A. ; Asai, A. ; Kawashima, Y. ; Sorada, H. ; Kanzawa, Y. ; Kawashima, T. ; Hara, H. ; Takagi, T.
Author_Institution :
Adv. Technol. Res. Lab., Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, we have realized both p- and n-SiGe-DTMOS on SOI substrate simultaneously using LOCOS isolation and selective epitaxial growth CMOS process, and have examined LFN properties of p- and n-SiGe-SOI-DTMOS for the first time.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOSFET; chemical vapour deposition; circuit noise; elemental semiconductors; isolation technology; oxidation; semiconductor materials; silicon-on-insulator; GeSi-Si; LOCOS isolation; SiGe channel SOI dynamic threshold MOSFETs; low frequency noise; low-power applications; selective epitaxial growth CMOS process; CMOS integrated circuits; CVD; Circuit noise; Germanium alloys; Isolation technology; MOSFETs; Oxidation; Semiconductor materials; Silicon alloys; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242932
