DocumentCode
2259406
Title
Impact of self-heating on digital SOI and strained-silicon CMOS circuits
Author
Jenkins, K.A. ; Franch, R.L.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2003
fDate
29 Sept.-2 Oct. 2003
Firstpage
161
Lastpage
163
Abstract
In this paper, we describe the worst-case drain current reduction due to self-heating in digital SOI CMOS circuits.
Keywords
CMOS digital integrated circuits; elemental semiconductors; integrated circuit modelling; silicon; silicon-on-insulator; Si; digital SOI; drain current reduction; self heating; strained silicon CMOS circuit; CMOS digital integrated circuits; Integrated circuit modeling; Silicon; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2003. IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-7815-6
Type
conf
DOI
10.1109/SOI.2003.1242936
Filename
1242936
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