Title :
Impact ionization and band-to-band tunneling in ultrathin body SOI devices with undoped channels
Author :
Luyken, R.J. ; Hartwich, J. ; Specht, M. ; Dreeskornfeld, L. ; Städele, M. ; Rosner, W. ; Hofmann, F. ; Landgraf, E. ; Schulz, T. ; Kretz, J. ; Risch, L.
Author_Institution :
Infineon Technol. Corp. Res., Munchen, Germany
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, we investigate leakage currents due to impact ionization and band-to-band tunneling effects in FD SOI transistors using energy balance simulations.
Keywords :
MOSFET; elemental semiconductors; impact ionisation; silicon-on-insulator; tunnelling; Si; energy balance simulation; fully depleted SOI transistor; impact ionization; leakage current; tunneling effect; Impact ionization; MOSFETs; Silicon on insulator technology; Tunneling;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242938
