DocumentCode
2259445
Title
Impact ionization and band-to-band tunneling in ultrathin body SOI devices with undoped channels
Author
Luyken, R.J. ; Hartwich, J. ; Specht, M. ; Dreeskornfeld, L. ; Städele, M. ; Rosner, W. ; Hofmann, F. ; Landgraf, E. ; Schulz, T. ; Kretz, J. ; Risch, L.
Author_Institution
Infineon Technol. Corp. Res., Munchen, Germany
fYear
2003
fDate
29 Sept.-2 Oct. 2003
Firstpage
166
Lastpage
167
Abstract
In this paper, we investigate leakage currents due to impact ionization and band-to-band tunneling effects in FD SOI transistors using energy balance simulations.
Keywords
MOSFET; elemental semiconductors; impact ionisation; silicon-on-insulator; tunnelling; Si; energy balance simulation; fully depleted SOI transistor; impact ionization; leakage current; tunneling effect; Impact ionization; MOSFETs; Silicon on insulator technology; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2003. IEEE International
ISSN
1078-621X
Print_ISBN
0-7803-7815-6
Type
conf
DOI
10.1109/SOI.2003.1242938
Filename
1242938
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