• DocumentCode
    2259474
  • Title

    A new and fast method to compute steady state in PD-SOI circuits and its application to standard cells library characterization

  • Author

    Liot, V. ; Flatresse, P.

  • Author_Institution
    STMicroelectron., Crolles, France
  • fYear
    2003
  • fDate
    29 Sept.-2 Oct. 2003
  • Firstpage
    170
  • Lastpage
    171
  • Abstract
    In this paper, a fast and robust method to simulate the steady state equilibrium in Partially Depleted SOI circuits is described. This method is presented through the evaluation of the history effect in a 0.13 μm PD-SOI technology dedicated to low power/low voltage applications.
  • Keywords
    MOSFET; MOSFET circuits; elemental semiconductors; semiconductor device models; silicon-on-insulator; 0.13 micron; Si-SiO2; low power-low voltage applications; partially depleted SOI circuits; standard cells library characterization; steady state equilibrium; MOSFET circuits; MOSFETs; Semiconductor device modeling; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2003. IEEE International
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-7815-6
  • Type

    conf

  • DOI
    10.1109/SOI.2003.1242940
  • Filename
    1242940
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2259474