Title :
A new and fast method to compute steady state in PD-SOI circuits and its application to standard cells library characterization
Author :
Liot, V. ; Flatresse, P.
Author_Institution :
STMicroelectron., Crolles, France
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, a fast and robust method to simulate the steady state equilibrium in Partially Depleted SOI circuits is described. This method is presented through the evaluation of the history effect in a 0.13 μm PD-SOI technology dedicated to low power/low voltage applications.
Keywords :
MOSFET; MOSFET circuits; elemental semiconductors; semiconductor device models; silicon-on-insulator; 0.13 micron; Si-SiO2; low power-low voltage applications; partially depleted SOI circuits; standard cells library characterization; steady state equilibrium; MOSFET circuits; MOSFETs; Semiconductor device modeling; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242940
