Semiconductor diode lasers for telecommunications

Author

Wang, W.I.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

fYear

2001

fDate

2001

Firstpage

591

Abstract

Summary form only given. A major area of research in semiconductor lasers for telecommunications is 1.3 μm and 1.55 μm vertical-cavity surface-emitting lasers (VCSELs). The current approaches include wafer fusion to combine distributed Bragg reflectors (DBR) with the active region, epitaxial growth of InGaAsN active layer on lattice-matched GaAs substrates, epitaxial growth of InAlAs/InGaAs latticed-matched to InP substrates, and epitaxial growth of GaAsSb heterostructures. This talk will emphasize the InGaAsN approach including the work on using Sb as a surfactant to improve the InGaAsN material. Recent results will be presented

Keywords

distributed Bragg reflector lasers; epitaxial growth; optical communication equipment; semiconductor lasers; surface emitting lasers; wafer bonding; 1.3 micron; 1.55 micron; GaAs; GaAs substrate; GaAsSb; GaAsSb heterostructure; InAlAs-InGaAs; InAlAs/InGaAs heterostructure; InGaAsN; InGaAsN active layer; InP; InP substrate; Sb; Sb surfactant; distributed Bragg reflector; lattice-matched epitaxial growth; semiconductor diode laser; telecommunications applications; vertical-cavity surface-emitting laser; wafer fusion; Distributed Bragg reflectors; Epitaxial growth; Gallium arsenide; Indium compounds; Laser fusion; Semiconductor diodes; Semiconductor lasers; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984588

Filename

984588