Title :
Semiconductor diode lasers for telecommunications
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Abstract :
Summary form only given. A major area of research in semiconductor lasers for telecommunications is 1.3 μm and 1.55 μm vertical-cavity surface-emitting lasers (VCSELs). The current approaches include wafer fusion to combine distributed Bragg reflectors (DBR) with the active region, epitaxial growth of InGaAsN active layer on lattice-matched GaAs substrates, epitaxial growth of InAlAs/InGaAs latticed-matched to InP substrates, and epitaxial growth of GaAsSb heterostructures. This talk will emphasize the InGaAsN approach including the work on using Sb as a surfactant to improve the InGaAsN material. Recent results will be presented
Keywords :
distributed Bragg reflector lasers; epitaxial growth; optical communication equipment; semiconductor lasers; surface emitting lasers; wafer bonding; 1.3 micron; 1.55 micron; GaAs; GaAs substrate; GaAsSb; GaAsSb heterostructure; InAlAs-InGaAs; InAlAs/InGaAs heterostructure; InGaAsN; InGaAsN active layer; InP; InP substrate; Sb; Sb surfactant; distributed Bragg reflector; lattice-matched epitaxial growth; semiconductor diode laser; telecommunications applications; vertical-cavity surface-emitting laser; wafer fusion; Distributed Bragg reflectors; Epitaxial growth; Gallium arsenide; Indium compounds; Laser fusion; Semiconductor diodes; Semiconductor lasers; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984588
