Title :
A new dynamic beta-ratio circuit technique for strained-Si technology
Author :
Joshi, Rajiv V. ; Kim, Keunwoo ; Chuang, Ching-Te
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, a new dynamic β-ratio technique for strained Si technology where the strength of the pFET is enhanced during active operation. The viability and benefit of the technique are discussed and compared with alternative techniques.
Keywords :
elemental semiconductors; field effect transistor circuits; field effect transistors; semiconductor device models; silicon; silicon-on-insulator; Si; dynamic beta-ratio circuit; pFET; strained-Si technology; FET circuits; FETs; Semiconductor device modeling; Silicon; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242943
