DocumentCode
2259585
Title
Complete RF characterisation of CMOS power transistors for low noise and high power front end amplifier design
Author
Walthes, W. ; Pascht, A. ; Berroth, M.
fYear
2001
fDate
2001
Firstpage
605
Lastpage
608
Abstract
The advances in CMOS process technology enables the design of analog high frequency circuits for mobile communication products. Low noise amplifiers as well as power amplifiers are required in the RF front end. This work presents a complete and consistent characterisation procedure for power transistors of a standard 0.35 μm CMOS technology. With the developed tools for small signal, large signal and noise modelling a full characterisation of the transistor is achieved
Keywords
power MOSFET; power amplifiers; radiofrequency amplifiers; semiconductor device models; semiconductor device noise; 0.35 micron; CMOS power transistor; RF front-end; large-signal model; low noise amplifier; noise model; power amplifier; small-signal model; CMOS technology; Circuit noise; Electrical resistance measurement; Equivalent circuits; Frequency measurement; Low-noise amplifiers; MOSFET circuits; Power transistors; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2001 International
Conference_Location
Washington, DC
Print_ISBN
0-7803-7432-0
Type
conf
DOI
10.1109/ISDRS.2001.984592
Filename
984592
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