Title :
A physical model of a CMOS varactor with high capacitance tuning range and its application to simulate a voltage controlled oscillator
Author :
Maget, Judith ; Kraus, Rainer ; Tiebout, Marc
Author_Institution :
Dept. of Electr. Eng., Univ. of Bundeswehr, Munich, Germany
Abstract :
A physical model of a CMOS varactor with high capacitance tuning range in multi-finger layout is presented. The model describes the voltage dependent capacitances and resistances and the parasitics due to connecting wires. Simulations of frequency tuning of a LC-oscillator employing the varactor are verified against measurements
Keywords :
MOS capacitors; circuit tuning; semiconductor device models; varactors; voltage-controlled oscillators; CMOS varactor; LC oscillator; capacitance tuning range; frequency tuning; multi-finger layout; physical model; voltage controlled oscillator; CMOS technology; Circuit optimization; Inductors; Parasitic capacitance; Radiofrequency integrated circuits; Semiconductor device modeling; Tuning; Varactors; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984593
