Title :
Quantum mechanical effects on double-gate MOSFET scaling
Author :
Chen, Qiang ; Wang, Lihui ; Meindl, James D.
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
29 Sept.-2 Oct. 2003
Abstract :
In this paper, an analytical quantum mechanical threshold voltage model is developed and verified to be accurate with 2D DESSIS numerical simulations. Quantisation effects on DG MOSFET scalability in a broader context of parameter variations are then examined.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; elemental semiconductors; nanostructured materials; scaling circuits; semiconductor device models; silicon; 2D DESSIS numerical simulation; Si; double gate MOSFET scalability; quantum mechanical threshold voltage model; Counting circuits; MOSFETs; Partial differential equations; Quantum theory; Semiconductor device modeling; Silicon;
Conference_Titel :
SOI Conference, 2003. IEEE International
Print_ISBN :
0-7803-7815-6
DOI :
10.1109/SOI.2003.1242945
