Fabrication of GaAs-based integrated 2-bit half and full adders by novel hexagonal BDD quantum circuit approach

Ultrahigh-density, ultrahigh-speed and ultralow power consumption logic circuits beyond the Si CMOS LSI scaling limit, realized by high density integration of nanometer-scale quantum devices, are promising candidates for use in advanced information technology. This will also find applications in the emerging wide range nanotechnology area, covering chemistry and biology, for nano-sensing, nano-scale signal processing and nano-control. However, no realistic approach for quantum integrated circuits has been established so far. To overcome this situation, we have recently proposed a hexagonal binary decision diagram (BDD) quantum circuit approach for high density integration of III-V quantum devices. The purpose of this paper is to investigate the feasibility of the novel hexagonal BDD quantum circuit approach through fabrication of GaAs-based BDD 2-bit half adder and full adder circuits