Title :
Effects of surface Fermi level pinning and surface state charging on control characteristics of nanometer scale Schottky gates formed on GaAs
Author :
Kameda, Atsushi ; Kasai, Seiya ; Sato, Taketomo ; Hasegawa, Hideki
Author_Institution :
Graduate Sch. of Electron. & Inf., Hokkaido Univ., Sapporo, Japan
Abstract :
The purpose of this paper is to investigate the effect of the surface Fermi level pinning and surface state charging on gate control characteristics of nanometer-scale Schottky (nano-Schottky) gates on GaAs both theoretically and experimentally. This is a first attempt to establish a realistic model for complicated surface state phenomenon in III-V nanoelectronics
Keywords :
Fermi level; III-V semiconductors; Schottky barriers; gallium arsenide; surface states; GaAs; III-V nanoelectronics; control characteristics; nanometer-scale Schottky gate; surface Fermi level pinning; surface state charging; Capacitance measurement; Capacitance-voltage characteristics; Gallium arsenide; Gratings; HEMTs; III-V semiconductor materials; MESFETs; MODFETs; Schottky barriers; Surface charging;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984598
