DocumentCode
2259687
Title
Effects of surface Fermi level pinning and surface state charging on control characteristics of nanometer scale Schottky gates formed on GaAs
Author
Kameda, Atsushi ; Kasai, Seiya ; Sato, Taketomo ; Hasegawa, Hideki
Author_Institution
Graduate Sch. of Electron. & Inf., Hokkaido Univ., Sapporo, Japan
fYear
2001
fDate
2001
Firstpage
626
Lastpage
629
Abstract
The purpose of this paper is to investigate the effect of the surface Fermi level pinning and surface state charging on gate control characteristics of nanometer-scale Schottky (nano-Schottky) gates on GaAs both theoretically and experimentally. This is a first attempt to establish a realistic model for complicated surface state phenomenon in III-V nanoelectronics
Keywords
Fermi level; III-V semiconductors; Schottky barriers; gallium arsenide; surface states; GaAs; III-V nanoelectronics; control characteristics; nanometer-scale Schottky gate; surface Fermi level pinning; surface state charging; Capacitance measurement; Capacitance-voltage characteristics; Gallium arsenide; Gratings; HEMTs; III-V semiconductor materials; MESFETs; MODFETs; Schottky barriers; Surface charging;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2001 International
Conference_Location
Washington, DC
Print_ISBN
0-7803-7432-0
Type
conf
DOI
10.1109/ISDRS.2001.984598
Filename
984598
Link To Document