Title :
In0.5Ga0.5P/In0.22Ga0.78 As/GaAs pseudomorphic high electron mobility transistor with gate oxide layer for improving on-state and off-state breakdown voltages
Author :
Lee, J.-W. ; Kang, I.-H. ; Kang, S.-J. ; Jo, S.-J. ; In, S.-K. ; Song, H.-J. ; Kim, J.-H. ; Song, J.-I.
Author_Institution :
Dept. of Inf. & Commun., K-JIST, Kwangju, South Korea
Abstract :
We report, for the first time to our knowledge, the characteristics of In0.5Ga0.5P/In0.22Ga 0.78As/GaAs p-HEMTs with a 50 Å gate oxide layer implemented by the liquid phase oxidation of GaAs. This enhances the on-state and off-state breakdown voltages compared to those of p-HEMT without a gate oxide layer, permitting a trade-off between channel current driving capability and both breakdown voltages
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; leakage currents; oxidation; semiconductor device breakdown; 50 A; In0.5Ga0.5P-In0.22Ga0.78 As-GaAs; InGaP/InGaAs/GaAs p-HEMTs; channel current driving capability; gate leakage currents; gate oxide layer; liquid phase oxidation; off-state breakdown voltage; on-state breakdown voltage; pseudomorphic high electron mobility transistor; Electric breakdown; Electrodes; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; MOSFETs; Oxidation; PHEMTs;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984600
