DocumentCode
2259748
Title
High speed and high power performances of LTG-GaAs based TWPDs in telecommunication wavelength (/spl sim/1.3 /spl mu/m)
Author
Jin-Wei Shi ; Yen-Hung Chen ; Kian-Giap Gan ; Yi-Jen Chiu ; Bowers, John E. ; Chi-Kuang Sun
Author_Institution
Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2002
fDate
24-24 May 2002
Firstpage
10
Abstract
Summary form only given. We demonstrate ultra-high speed and high saturation power performance of LTG-GaAs based MSM traveling-wave photodetectors (TWPDs) in the telecommunication wavelength regime (/spl sim/1300 nm). Due to the short carrier trapping time of the LTG-GaAs layer and the superior microwave guiding structure in MSM TWPDs, record ultra-high peak power bandwidth product performance has been obtained in long absorption length devices. These results suggest applications in low-cost GaAs based photo-receiver circuits without electrical pre-amplifiers and high power photomixer devices which are compatible with fiber optical communication components.
Keywords
III-V semiconductors; gallium arsenide; high-speed optical techniques; metal-semiconductor-metal structures; optical receivers; photodetectors; 1300 nm; GaAs; LTG-GaAs based MSM traveling-wave photodetectors; carrier trapping time; high speed high power performance; long absorption length devices; microwave guiding structure; photoreceiver circuits; telecommunication wavelength regime; ultra-high peak power bandwidth product performance; ultra-high speed high saturation power performance; Attenuation; Bandwidth; Gallium arsenide; Insertion loss; Optical attenuators; Optical fiber devices; Optical fiber polarization; Radio frequency; Samarium; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-706-7
Type
conf
DOI
10.1109/CLEO.2002.1033367
Filename
1033367
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