Title :
InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on a GaAs substrate using InP metamorphic buffer layer
Author :
Kim, Y.M. ; Dalhstrom, M. ; Lee, S. ; Rodwell, M.J.W. ; Gossard, A.C.
Abstract :
Summary form only given. We report InP-based DHBTs grown on GaAs using InP as the metamorphic buffer layer. While AlGaAsSb and InAlAs have also been explored as buffer layers, the InP layers grown in our laboratory have substantially better thermal conductivity-16.1 W/mK for InP, compared with 10.5 W/mK for InAlAs and 8.4 W/mK for AlGaAsSb. With a typical HBT geometry and 2×105 W/cm2 dissipation, a thermal analysis indicates that the use of the InP buffer layer will reduce the operating junction temperature by 16-39 °C, a difference which can have a substantial impact upon device reliability
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor device reliability; thermal analysis; thermal conductivity; GaAs; GaAs substrate; HBT geometry; InP metamorphic buffer layer; InP-In0.53Ga0.47As-InP; InP-based DHBTs; InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors; MBE; RHEED intensity; device reliability; operating junction temperature; thermal analysis; thermal conductivity; Buffer layers; Double heterojunction bipolar transistors; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Indium compounds; Indium phosphide; Laboratories; Temperature; Thermal conductivity;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984601
