DocumentCode
2259759
Title
InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on a GaAs substrate using InP metamorphic buffer layer
Author
Kim, Y.M. ; Dalhstrom, M. ; Lee, S. ; Rodwell, M.J.W. ; Gossard, A.C.
fYear
2001
fDate
2001
Firstpage
638
Lastpage
639
Abstract
Summary form only given. We report InP-based DHBTs grown on GaAs using InP as the metamorphic buffer layer. While AlGaAsSb and InAlAs have also been explored as buffer layers, the InP layers grown in our laboratory have substantially better thermal conductivity-16.1 W/mK for InP, compared with 10.5 W/mK for InAlAs and 8.4 W/mK for AlGaAsSb. With a typical HBT geometry and 2×105 W/cm2 dissipation, a thermal analysis indicates that the use of the InP buffer layer will reduce the operating junction temperature by 16-39 °C, a difference which can have a substantial impact upon device reliability
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor device reliability; thermal analysis; thermal conductivity; GaAs; GaAs substrate; HBT geometry; InP metamorphic buffer layer; InP-In0.53Ga0.47As-InP; InP-based DHBTs; InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors; MBE; RHEED intensity; device reliability; operating junction temperature; thermal analysis; thermal conductivity; Buffer layers; Double heterojunction bipolar transistors; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Indium compounds; Indium phosphide; Laboratories; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2001 International
Conference_Location
Washington, DC
Print_ISBN
0-7803-7432-0
Type
conf
DOI
10.1109/ISDRS.2001.984601
Filename
984601
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