Low-voltage, fast-programming P-channel flash memory with JVD tunneling nitride

Author

She, Min ; King, Tsu-Jae ; Hu, Chenming ; Zhu, Wenjuan ; Luo, Zhijiong ; Han, Jin-Ping ; Ma, Tso-Ping

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

2001

fDate

2001

Firstpage

641

Lastpage

644

Abstract

High-quality JVD nitride is applied to a P-channel flash memory as the tunneling dielectric for the first time. Compared to control devices with SiO₂ tunneling dielectric, much faster programming speed can be achieved with low programming voltage as well as better retention time. Multilevel capability is also demonstrated. This device can be programmed by hot electrons and erased by hot holes, or vice versa

Keywords

CMOS memory circuits; flash memories; hot carriers; low-power electronics; tunnelling; vapour deposition; CMOS technologies; JVD tunneling nitride; Si₃N₄; hot electron programming; hot hole erasure; jet vapor deposition; low programming voltage; low-voltage fast-programming P-channel flash memory; multilevel capability; programming speed; retention time; tunneling dielectric; CMOS technology; Dielectric devices; Flash memory; Hot carriers; Low voltage; Nonvolatile memory; Secondary generated hot electron injection; Threshold voltage; Tunneling; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984603

Filename

984603