Title :
Low-voltage, fast-programming P-channel flash memory with JVD tunneling nitride
Author :
She, Min ; King, Tsu-Jae ; Hu, Chenming ; Zhu, Wenjuan ; Luo, Zhijiong ; Han, Jin-Ping ; Ma, Tso-Ping
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
High-quality JVD nitride is applied to a P-channel flash memory as the tunneling dielectric for the first time. Compared to control devices with SiO2 tunneling dielectric, much faster programming speed can be achieved with low programming voltage as well as better retention time. Multilevel capability is also demonstrated. This device can be programmed by hot electrons and erased by hot holes, or vice versa
Keywords :
CMOS memory circuits; flash memories; hot carriers; low-power electronics; tunnelling; vapour deposition; CMOS technologies; JVD tunneling nitride; Si3N4; hot electron programming; hot hole erasure; jet vapor deposition; low programming voltage; low-voltage fast-programming P-channel flash memory; multilevel capability; programming speed; retention time; tunneling dielectric; CMOS technology; Dielectric devices; Flash memory; Hot carriers; Low voltage; Nonvolatile memory; Secondary generated hot electron injection; Threshold voltage; Tunneling; Voltage control;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984603
