Title :
Scaling effects of gate dielectric thickness on plasma charging damage in MOS devices
Author :
Chang-Liao, Kuei-Shu ; Tzeng, Pei-Jer
Author_Institution :
National Tsing Hua University
Abstract :
The plasma process induced charging damage on high-k gate dielectrics deserves to be explored as it is rarely reported. Scaling effects of gate dielectric thickness on plasma process induced charging damage in MOS devices are particularly investigated in this work
Keywords :
Degradation; Dielectric devices; Electron traps; MOS devices; Plasma applications; Plasma density; Plasma devices; Plasma measurements; Plasma properties; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984605
