• DocumentCode
    2259875
  • Title

    Scaling effects of gate dielectric thickness on plasma charging damage in MOS devices

  • Author

    Chang-Liao, Kuei-Shu ; Tzeng, Pei-Jer

  • Author_Institution
    National Tsing Hua University
  • fYear
    2001
  • fDate
    5-7 Dec. 2001
  • Firstpage
    649
  • Lastpage
    652
  • Abstract
    The plasma process induced charging damage on high-k gate dielectrics deserves to be explored as it is rarely reported. Scaling effects of gate dielectric thickness on plasma process induced charging damage in MOS devices are particularly investigated in this work
  • Keywords
    Degradation; Dielectric devices; Electron traps; MOS devices; Plasma applications; Plasma density; Plasma devices; Plasma measurements; Plasma properties; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2001 International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-7432-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2001.984605
  • Filename
    984605
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2259875