Title :
A compact deep-submicron MOSFET gds model including hot-electron and thermoelectric effects
Author :
Zhou, X. ; Chiah, S.B. ; Lim, K.Y.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
A compact Ids model with physical gds modeling for deep-submicron MOSFETs is formulated based on first-principles momentum/energy balance equations, which simultaneously includes the hot-electron and thermoelectric effects in a unified compact form with one (or two) fitting parameter(s) and one-step extraction. The model has been verified with 0.18-μm experimental data with good gds prediction
Keywords :
MOSFET; electric admittance; hot carriers; semiconductor device models; thermal diffusion; thermoelectricity; deep-submicron MOSFET model; drain conductance modeling; electron-temperature gradient; finite drain conductance; first-principles momentum/energy balance equations; fitting parameters; hot-electron effects; one-step extraction; thermal-diffusion; thermoelectric effects; Electrons; Equations; Fitting; MOSFET circuits; Power engineering and energy; Pulp manufacturing; Temperature; Thermoelectricity; Virtual manufacturing; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984606
