DocumentCode :
2259895
Title :
Energy- and endurance-aware design of phase change memory caches
Author :
Joo, Yongsoo ; Niu, Dimin ; Dong, Xiangyu ; Sun, Guangyu ; Chang, Naehyuck ; Xie, Yuan
Author_Institution :
Dept. of Comput. Sci. & Eng., Pennsylvania State Univ., University Park, PA, USA
fYear :
2010
fDate :
8-12 March 2010
Firstpage :
136
Lastpage :
141
Abstract :
Phase change memory (PCM) is one of the most promising technology among emerging non-volatile random access memory technologies. Implementing a cache memory using PCM provides many benefits such as high density, non-volatility, low leakage power, and high immunity to soft error. However, its disadvantages such as high write latency, high write energy, and limited write endurance prevent it from being used as a drop-in replacement of an SRAM cache. In this paper, we study a set of techniques to design an energy- and endurance-aware PCM cache. We also modeled the timing, energy, endurance, and area of PCM caches and integrated them into a PCM cache simulator to evaluate the techniques. Experiments show that our PCM cache design can achieve 8% of energy saving and 3.8 years of lifetime compared with a baseline PCM cache having less than a hour of lifetime.
Keywords :
SRAM chips; cache storage; phase change memories; SRAM cache; endurance-aware design; energy-aware design; nonvolatile random access memory technologies; phase change memory caches; Cache memory; Crystallization; Delay; Energy consumption; Germanium alloys; Nonvolatile memory; Phase change materials; Phase change memory; Random access memory; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Automation & Test in Europe Conference & Exhibition (DATE), 2010
Conference_Location :
Dresden
ISSN :
1530-1591
Print_ISBN :
978-1-4244-7054-9
Type :
conf
DOI :
10.1109/DATE.2010.5457221
Filename :
5457221
Link To Document :
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