• DocumentCode
    2259896
  • Title

    Measuring the lifetime of ultrashort electronic coherences with long light pulses: The fragile Eg state in Sb and Bi

  • Author

    Li, Jingjing ; Chen, Jian ; Reis, David A. ; Fahy, Stephen ; Merlin, Roberto

  • Author_Institution
    Dept. of Phys., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We use a combination of ultrafast stimulated Raman scattering and continuous wave spontaneous Raman scattering to determine the lifetime of electronic coherences of Eg symmetry in Sb and Bi, which are below 10fs at 293K.
  • Keywords
    antimony; bismuth; high-speed optical techniques; stimulated Raman scattering; Bi; Sb; continuous wave spontaneous Raman scattering; fragile Eg state; long light pulses; temperature 293 K; ultrafast stimulated Raman scattering; ultrashort electronic coherence lifetime; Bismuth; Force; Oscillators; Phonons; Raman scattering; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5951448
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2259896