DocumentCode :
2259896
Title :
Measuring the lifetime of ultrashort electronic coherences with long light pulses: The fragile Eg state in Sb and Bi
Author :
Li, Jingjing ; Chen, Jian ; Reis, David A. ; Fahy, Stephen ; Merlin, Roberto
Author_Institution :
Dept. of Phys., Univ. of Michigan, Ann Arbor, MI, USA
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
We use a combination of ultrafast stimulated Raman scattering and continuous wave spontaneous Raman scattering to determine the lifetime of electronic coherences of Eg symmetry in Sb and Bi, which are below 10fs at 293K.
Keywords :
antimony; bismuth; high-speed optical techniques; stimulated Raman scattering; Bi; Sb; continuous wave spontaneous Raman scattering; fragile Eg state; long light pulses; temperature 293 K; ultrafast stimulated Raman scattering; ultrashort electronic coherence lifetime; Bismuth; Force; Oscillators; Phonons; Raman scattering; Tensile stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5951448
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2259896
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