• DocumentCode
    2260001
  • Title

    Reliability of polynomial IDS-VGS-VDS model fitted using harmonic-balance simulation

  • Author

    Aikio, Janne P. ; Rahkonen, Timo

  • Author_Institution
    Dept. of Electr. & Inf. Eng., Oulu Univ., Finland
  • Volume
    3
  • fYear
    2005
  • fDate
    28 Aug.-2 Sept. 2005
  • Abstract
    A distortion tear-down analysis technique based on harmonic-balance (HB) simulation and polynomial model fitting has been presented recently. However, the fitting of IDS-VGS-VDS current source of LDMOS RF power transistor amplifier suffers from high correlation between controlling voltages VGS and VDS. In this paper, the accuracy of the analysis results is discussed, and techniques to improve the reliability of the fitting are presented.
  • Keywords
    harmonic analysis; polynomials; reliability; semiconductor device models; LDMOS RF power transistor amplifier; current source; distortion tear-down analysis technique; harmonic-balance simulation; polynomial model fitting; Analytical models; Circuit simulation; Circuit testing; Equations; Frequency; Intrusion detection; MATLAB; Mathematical model; Polynomials; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuit Theory and Design, 2005. Proceedings of the 2005 European Conference on
  • Print_ISBN
    0-7803-9066-0
  • Type

    conf

  • DOI
    10.1109/ECCTD.2005.1523067
  • Filename
    1523067
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2260001