• DocumentCode
    2260067
  • Title

    A drift free nernstian iridium oxide pH sensor

  • Author

    Hendrikse, J. ; Olthuis, W. ; Bergveld, P.

  • Author_Institution
    MESA Res. Inst., Twente Univ., Enschede, Netherlands
  • Volume
    2
  • fYear
    1997
  • fDate
    16-19 Jun 1997
  • Firstpage
    1367
  • Abstract
    A novel way of eliminating drift problems in metal oxide pH sensors is presented. The method employs a FET-structure under the electrode that uses the metal oxide as a gate contact. In addition to the enhanced drift properties, the new sensor has an almost ideal nernstian response. First a theoretical explanation is given, which is then confirmed by measurements
  • Keywords
    chemical sensors; electrochemical electrodes; ion sensitive field effect transistors; iridium compounds; pH measurement; FET-structure; IrO2; MOSFET; almost ideal nernstian response; drift free nernstian iridium oxide pH sensor; drift problems; electrode; gate contact; metal oxide pH sensors; Actuators; Amperometric sensors; Capacitance; Capacitive sensors; Electrodes; Protons; Solid state circuits; Testing; Threshold voltage; Transducers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
  • Conference_Location
    Chicago, IL
  • Print_ISBN
    0-7803-3829-4
  • Type

    conf

  • DOI
    10.1109/SENSOR.1997.635491
  • Filename
    635491
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2260067