Title :
FET modeling for analog and digital applications
Author :
Fjeldly, T.A. ; Ytterdal, T. ; Shur, M.S.
Author_Institution :
Dept. of Phys. Electron., Norwegian Univ. of Sci. & Technol., Trondheim, Norway
Abstract :
We consider some recent developments in the modeling of submicrometer field effect transistor devices for use in design of analog and mixed mode applications. We emphasize the use of unified models with a precise and continuous description of the I-V and C-V characteristics in all regimes of operation, including the transition regions. The models incorporate short-channel and high-field effects, gate leakage current, and temperature dependencies of device parameters
Keywords :
equivalent circuits; field effect transistors; leakage currents; semiconductor device models; C-V characteristics; FET modeling; I-V characteristics; analog applications; device parameters; digital applications; field effect transistor devices; gate leakage current; high-field effects; mixed mode applications; short-channel effects; submicron FET; temperature dependencies; unified models; Application software; Capacitance-voltage characteristics; Circuit simulation; Design engineering; FETs; HEMTs; MESFETs; MODFETs; MOSFETs; Voltage;
Conference_Titel :
Frontiers in Electronics, 1997. WOFE '97. Proceedings., 1997 Advanced Workshop on
Conference_Location :
Puerto de la Cruz
Print_ISBN :
0-7803-4059-0
DOI :
10.1109/WOFE.1997.621178
