DocumentCode :
2260526
Title :
A programmable online/off-line built-in self-test scheme for RAMs with ECC
Author :
Lu, Hsing-Chen ; Li, Jin-Fu
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fYear :
2009
fDate :
24-27 May 2009
Firstpage :
1997
Lastpage :
2000
Abstract :
Embedded memory plays an important role in modern system-on-chip designs. However, the reliability issue of embedded memories becomes more and more critical with the shrinking of transistor feature size. This paper proposes a programmable online/off-line built-in self-test (BIST) scheme for random access memories (RAMs) with error correction code (ECC). The BIST scheme can be used for performing production testing and periodic transparent testing. In comparison with an existing transparent BIST scheme, the proposed BIST scheme does not incur the aliasing problem. Also, it can provide good fault location capability in online test mode. Experimental results show that the area cost of the proposed online/off-line BIST scheme is low-only about 2.6% for a 4Ktimes39-bit SRAM.
Keywords :
SRAM chips; built-in self test; circuit reliability; circuit testing; error correction codes; fault location; RAM; SRAM; embedded memory; error correction code; fault location capability; off-line built-in self-test scheme; periodic transparent testing; production testing; programmable online built-in self-test scheme; random access memories; system-on-chip design; transistor; Built-in self-test; Costs; Error correction codes; Fault location; Performance evaluation; Production; Random access memory; System-on-a-chip; Testing; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-3827-3
Electronic_ISBN :
978-1-4244-3828-0
Type :
conf
DOI :
10.1109/ISCAS.2009.5118183
Filename :
5118183
Link To Document :
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