DocumentCode
2261424
Title
Effect of mobile ionic-charge on CMOS based ion-sensitive field-effect transistors (ISFETs)
Author
Prodromakis, T. ; Georgiou, P. ; Michelakis, K. ; Toumazou, C.
Author_Institution
Inst. of Biomed. Eng., Imperial Coll. London, London, UK
fYear
2009
fDate
24-27 May 2009
Firstpage
2165
Lastpage
2168
Abstract
This work is an investigation on the large threshold voltage variation exhibited in CMOS based ISFETs. This irregularity is thoroughly examined and is identified to be caused by mobile ionic charge that is induced in the sensing membrane when the membrane is in contact with the ionic-solution. This auxiliary charge increments the effective capacitance of the sensing membrane, causing irregular shifts in the characteristics of the devices. Several methods for overcoming this issue are addressed.
Keywords
CMOS integrated circuits; ion sensitive field effect transistors; CMOS; ISFET; ion sensitive field-effect transistor; mobile ionic-charge; threshold voltage variation; Biomedical engineering; Biomembranes; CMOS technology; Chemical sensors; Chemical technology; Educational institutions; FETs; Insulation; Protons; Threshold voltage; CMOS; ISFET; chemical sensor; drift; mobile ionic charge; threshold variation; trapped charge;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2009. ISCAS 2009. IEEE International Symposium on
Conference_Location
Taipei
Print_ISBN
978-1-4244-3827-3
Electronic_ISBN
978-1-4244-3828-0
Type
conf
DOI
10.1109/ISCAS.2009.5118225
Filename
5118225
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