• DocumentCode
    2262320
  • Title

    Operation of α(6H)-SiC pressure sensor at 500°C

  • Author

    Okojie, Robert S. ; Ned, Alexander A. ; Kurtz, Anthony D.

  • Author_Institution
    Kulite Semicond. Products, Leonia, NJ, USA
  • Volume
    2
  • fYear
    1997
  • fDate
    16-19 Jun 1997
  • Firstpage
    1407
  • Abstract
    6H-SiC piezoresistive pressure sensors operational at 500°C, were batch fabricated and tested. The full scale output (FSO at 1000 psi) was 40.66 mV and 20.03 mV at 23°C and 500°C, respectively, The full-scale linearity of -0.17% and hysteresis of 0.17% compared favorably with current technology. No serious degradation was observed when operated for ten hours at 500°C, The temperature coefficient of resistance (TCR), was -0.25%/°C and -0.05%/°C at 100°C and 500°C, respectively, The temperature coefficient of gauge factor (TCGF) exhibited negative values of 0.19%/°C and -0.11%°C at 100°C and 500°C, respectively, This work demonstrated batch manufacturing and operation of pressure sensors for temperatures beyond silicon technology
  • Keywords
    electric sensing devices; piezoresistive devices; pressure sensors; semiconductor materials; silicon compounds; 20.03 mV; 500 degC; SiC; batch manufacturing; full scale output; full-scale linearity; hysteresis; piezoresistive pressure sensors; temperature coefficient of gauge factor; temperature coefficient of resistance; Electromechanical sensors; Etching; Metallization; Packaging; Piezoresistance; Resistors; Silicon carbide; Space technology; Temperature sensors; Thermal sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
  • Conference_Location
    Chicago, IL
  • Print_ISBN
    0-7803-3829-4
  • Type

    conf

  • DOI
    10.1109/SENSOR.1997.635501
  • Filename
    635501