DocumentCode
2262320
Title
Operation of α(6H)-SiC pressure sensor at 500°C
Author
Okojie, Robert S. ; Ned, Alexander A. ; Kurtz, Anthony D.
Author_Institution
Kulite Semicond. Products, Leonia, NJ, USA
Volume
2
fYear
1997
fDate
16-19 Jun 1997
Firstpage
1407
Abstract
6H-SiC piezoresistive pressure sensors operational at 500°C, were batch fabricated and tested. The full scale output (FSO at 1000 psi) was 40.66 mV and 20.03 mV at 23°C and 500°C, respectively, The full-scale linearity of -0.17% and hysteresis of 0.17% compared favorably with current technology. No serious degradation was observed when operated for ten hours at 500°C, The temperature coefficient of resistance (TCR), was -0.25%/°C and -0.05%/°C at 100°C and 500°C, respectively, The temperature coefficient of gauge factor (TCGF) exhibited negative values of 0.19%/°C and -0.11%°C at 100°C and 500°C, respectively, This work demonstrated batch manufacturing and operation of pressure sensors for temperatures beyond silicon technology
Keywords
electric sensing devices; piezoresistive devices; pressure sensors; semiconductor materials; silicon compounds; 20.03 mV; 500 degC; SiC; batch manufacturing; full scale output; full-scale linearity; hysteresis; piezoresistive pressure sensors; temperature coefficient of gauge factor; temperature coefficient of resistance; Electromechanical sensors; Etching; Metallization; Packaging; Piezoresistance; Resistors; Silicon carbide; Space technology; Temperature sensors; Thermal sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location
Chicago, IL
Print_ISBN
0-7803-3829-4
Type
conf
DOI
10.1109/SENSOR.1997.635501
Filename
635501
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