Improved Electrical Characteristics of Honeycomb Nanowire ISFETs

Author

Taiuk Rim ; Kihyun Kim ; Sungho Kim ; Chang-Ki Baek ; Meyyappan, M. ; Yoon-Ha Jeong ; Jeong-Soo Lee

Author_Institution

Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

Volume

34

Issue

8

fYear

2013

fDate

Aug. 2013

Firstpage

1059

Lastpage

1061

Abstract

Ion-sensitive field-effect transistors (ISFETs) with a honeycomb nanowire (HCNW) structure have been fabricated on a silicon-on-insulator wafer. The HCNW ISFET shows lower threshold voltage, lower subthreshold swing, higher drain current, and lower variability than the conventional nanowire device. Improved electrical characteristics are mainly due to the increased effective channel width and enhanced current drivability. The HCNW structure also exhibits improved current sensitivity in its pH response. These results suggest that the HCNW structure is promising for enhancing device performance and realizing sensors with high sensitivity.

Keywords

ion sensitive field effect transistors; nanowires; pH; silicon-on-insulator; HCNW structure; Si; drain current; honeycomb nanowire ISFET; ion-sensitive field-effect transistors; pH response; silicon-on-insulator wafer; subthreshold swing; Honeycomb nanowire structure (HCNW); ion-sensitive field-effect transistor (ISFET); pH sensing; silicon nanowire;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2265391

Filename

6553074