DocumentCode
2262521
Title
The physical simulation of electrostatic microsystems with finite element method
Author
Kolchuzhin, Vladimir A.
Author_Institution
Chemnitz Univ. of Technol., Germany
fYear
2005
fDate
1-5 July 2005
Firstpage
13
Lastpage
20
Abstract
The physical level simulation of complex MEMS devices can be obtained by solving partial differential equations describing 3D coupled physical fields. This paper has described the methods to analyze electrostatic microsystems within FEM. Finally, a chronological description of FEM is presented in the context of integrating new computational technology into an existing program.
Keywords
electrostatic devices; finite element analysis; micromechanical devices; 3D coupled physical fields; MEMS devices; electrostatic microsystems; finite element method; partial differential equations; physical simulation; Actuators; Computational modeling; Electrostatics; Finite element methods; Microelectromechanical devices; Micromechanical devices; Microstructure; Microswitches; Partial differential equations; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2005. Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on
ISSN
1815-3712
Print_ISBN
5-7782-0491-4
Type
conf
DOI
10.1109/SIBEDM.2005.195569
Filename
1523174
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