DocumentCode :
2262722
Title :
Examination of dimer formation on Si(001) by Monte Carlo simulation
Author :
Nastovjak, Alla G. ; Romanyuk, Konstantin N. ; Shwartz, Nalatia L. ; Yanovitskaja, Zoya Sh ; Zinchenko, Konstantin Yu ; Zverev, Alexey V.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
fYear :
2005
fDate :
1-5 July 2005
Firstpage :
41
Lastpage :
44
Abstract :
Investigation of dimers influence on surface relief during annealing and deposition processes were carried out using Monte Carlo simulation. A new program package SilSim3D-7comp taking into account covalent bonds dimerization on the surface of diamond-like crystals was developed. Dimers formation on [001] and (105) surfaces was analyzed. Dimers were demonstrated to be responsible for surface relief stabilization.
Keywords :
Monte Carlo methods; annealing; association; bonds (chemical); elemental semiconductors; molecules; silicon; Monte Carlo simulation; Si; SilSim3D-7comp; annealing; covalent bonds dimerization; deposition processes; dimer formation; Atomic layer deposition; Crystals; Molecular beam epitaxial growth; Packaging; Quantum dots; Semiconductor process modeling; Substrates; Surface cleaning; Surface morphology; Surface reconstruction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials, 2005. Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on
ISSN :
1815-3712
Print_ISBN :
5-7782-0491-4
Type :
conf
DOI :
10.1109/SIBEDM.2005.195578
Filename :
1523183
Link To Document :
بازگشت