Title :
Influence of traps on magnetophotoconductivity in p-HgCdTe
Author :
Protasov, Dmitry D. ; Kostuchenko, Vladimir Ya ; Ovsyuk, Victor V.
Author_Institution :
Inst. of Semicond. Phys. SB RAS, Novosibirsk State Tech. Univ., Russia
Abstract :
The photoconductivity in magnetic field (magnetophotoconductivity) in p-HgCdTe was studied. Magnetic field and light were perpendicular to samples surface. The authors have found that the magnetophotoconductivity at temperature range 77-125 K has a small constant component independent of magnetic field. The origin of this phenomenon may be explained by influence of traps on magnetophotoconductivity.
Keywords :
II-VI semiconductors; cadmium compounds; carrier lifetime; infrared detectors; magnetic fields; magnetic traps; mercury compounds; photoelectromagnetic effects; 77 to 125 K; HgCdTe; cadmium-mercury telluride; carrier lifetime; magnetic field; magnetophotoconductivity; Charge carrier processes; Electron mobility; Electron traps; Magnetic fields; Magnetic materials; Magnetic semiconductors; Magnetosphere; Photoconductivity; Photonic crystals; Saturation magnetization;
Conference_Titel :
Electron Devices and Materials, 2005. Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on
Print_ISBN :
5-7782-0491-4
DOI :
10.1109/SIBEDM.2005.195580
