Title :
Investigation process of preferential chemical etching of GaAs
Author :
Khaynovskaya, Natalia V. ; Kamenskaya, Anna V.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
In this work a program of three-dimensional modeling of process of selective etching of GaAs has been considered. The authors described the analysis of results of simulation and results of experiment.
Keywords :
III-V semiconductors; etching; gallium arsenide; semiconductor process modelling; 3D modeling; GaAs; preferential chemical etching; selective etching; Analytical models; Atomic layer deposition; Chemical processes; Chemical technology; Etching; Fabrication; Frequency; Gallium arsenide; Microelectronics; Solid modeling;
Conference_Titel :
Electron Devices and Materials, 2005. Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on
Print_ISBN :
5-7782-0491-4
DOI :
10.1109/SIBEDM.2005.195581
