Title :
The CV curve investigation of MIS structure based on CdHgTe
Author :
Yartsev, Andrey V.
Author_Institution :
Inst. of Semicond. Phys. SB RAS, Novosibirsk, Russia
Abstract :
The CdHgTe (MCT) is the most and single material, which comply with industrial and military demand in middle and far infrared area for high quality imaging (3-5 μm and 8-12 μm accordingly) of far located objects. Further development of hi-end quality focal plane arrays based on CdHgTe needed detail investigation of electrophysical properties of devices, based on MCT. The metal-insulator-semiconductor (MIS) is the most promising photoelectrical devices based on MCT. However, it´s a small knowledge about surface properties of CdHgTe. This article announced about successful realization of MIS MCT and investigation of surface properties by measurement and analyses CV curves.
Keywords :
II-VI semiconductors; MIS structures; cadmium compounds; doping profiles; masks; mercury compounds; CV curve investigation; CdHgTe; MIS MCT; electrophysical properties; metal-insulator-semiconductor structures; photoelectrical devices; photomask set; surface properties; Conductors; Frequency modulation; Insulation; Linearity; Metal-insulator structures; Photonic band gap; Physics; Sputtering; Surface charging; Voltage;
Conference_Titel :
Electron Devices and Materials, 2005. Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on
Print_ISBN :
5-7782-0491-4
DOI :
10.1109/SIBEDM.2005.195582
