DocumentCode
2263150
Title
Reliability issues for embedded SRAM at 90nm and below
Author
Aitken, Rob
Author_Institution
ARM, Inc., Sunnyvale, CA
fYear
0
fDate
0-0 0
Abstract
Summary form only given. With ever-shrinking process technology, there is significant concern about the effects of process variability on design margins, yield, and performance. In addition, reliability is a major concern with new technology, not only through classic means such as latent defects and NBTI, but also by new issues brought on by variability, small feature sizes, and power-saving features such as dynamic supply voltage scaling. This paper shows how process scaling will affect reliability and how this interacts with ECC and redundancy features
Keywords
SRAM chips; embedded systems; integrated circuit reliability; integrated circuit yield; 90 nm; ECC; design margins; dynamic supply voltage scaling; embedded SRAM; performance; power-saving features; redundancy features; reliability issues; shrinking process technology; small feature sizes; variability; yield; Dynamic voltage scaling; Niobium compounds; Process design; Random access memory; Redundancy; Testing; Titanium compounds; USA Councils;
fLanguage
English
Publisher
ieee
Conference_Titel
On-Line Testing Symposium, 2006. IOLTS 2006. 12th IEEE International
Conference_Location
Lake Como
Print_ISBN
0-7695-2620-9
Type
conf
DOI
10.1109/IOLTS.2006.54
Filename
1655518
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